作者：H. Meer O. Gomonay A. Wittmann M. Kläui
反铁磁性过渡金属氧化物是自旋电子领域中一种已建立并广泛研究的材料体系，通常用作基于交换偏置的存储器件中的无源元件。目前，由于最近对长距离自旋输运、电流诱导开关和太赫兹发射的观测，人们的主要兴趣重新燃起。因此，绝缘过渡金属氧化物现在被认为是新型自旋电子器件中活性元素的有吸引力的候选者。在这里，我们讨论了一些最具破坏性的材料系统，并重点介绍了读写反铁磁有序的最新进展。本文旨在概述反铁磁绝缘领域的研究现状和潜在的未来方向。
Antiferromagnetic transition metal oxides are an established and widelystudied materials system in the context of spin-based electronics, commonlyused as passive elements in exchange bias-based memory devices. Currently,major interest has resurged due to the recent observation of long-distance spintransport, current-induced switching, and THz emission. As a result, insulatingtransition metal oxides are now considered to be attractive candidates foractive elements in novel spintronic devices. Here, we discuss some of the mostpromising materials systems and highlight recent advances in reading andwriting antiferromagnetic ordering. This article aims to provide an overview ofthe current research and potential future directions in the field ofantiferromagnetic insulatronics.
论文链接：http://arxiv.org/pdf/2303.13369v1
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