作者：Christin Schmitt Adithya Rajan Grischa Beneke Aditya Kumar Tobias Sparmann Hendrik Meer Beatrice Bednarz Rafael Ramos Miguel Angel Nino Michael Foerster Eiji Saitoh Mathias Kläui
我们研究了CoO/Pt双层中N’eel矢量的电流诱导开关，以了解底层反铁磁开关机制。令人惊讶的是，我们发现，对于超薄CoO/Pt双层，沿着相同路径的电脉冲可以导致自旋霍尔磁阻信号的增加或减少，这取决于脉冲的电流密度。通过将这些电学测量结果与施加电流脉冲前后反铁磁畴结构的XMLD-PEEM成像进行比较，我们揭示了超薄CoO（4nm）中N’eel矢量的重新定向。这使我们能够确定，即使是相反的电阻变化也可能由热磁弹性开关机制引起。重要的是，我们的空间分辨成像显示，施加电流脉冲的区域和更远的区域表现出不同的开关自旋结构，这可以通过基于自旋轨道扭矩的开关机制来解释，该机制可以在
We study current-induced switching of the N\’eel vector in CoO/Pt bilayers to understand the underlaying antiferromagnetic switching mechanism. Surprisingly, we find that for ultra-thin CoO/Pt bilayers electrical pulses along the same path can lead to an increase or decrease of the spin Hall magnetoresistance signal, depending on the current density of the pulse. By comparing the results of these electrical measurements to XMLD-PEEM imaging of the antiferromagnetic domain structure before and after the application of current pulses, we reveal the reorientation of the N\’eel vector in ultra-thin CoO(4 nm). This allows us to determine that even opposite resistance changes can result from a thermomagnetoelastic switching mechanism. Importantly, our spatially resolved imaging shows that regions where the current pulses are applied and regions further away exhibit different switched spin structures, which can be explained by a spin-orbit torque based switching mechanism that can dominate in very thin films.
论文链接：http://arxiv.org/pdf/2303.13308v1
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