作者：Moritz Hoesch Olena Fedchenko Mao Wang Christoph Schlueter Dmitrii Potorochin Katerina Medjanik Sergey Babenkov Anca S. Ciobanu Aimo Winkelmann Hans-Joachim Elmers Shengqiang Zhou Manfred Helm Gerd Schönhense
利用光电子能谱、光电子衍射和布洛赫波计算研究了硅中近距离Te杂质的多种掺杂配置。通过离子注入和脉冲激光退火来制备样品。掺杂剂浓度是可变的并且高出Te在硅中的溶解度极限。所讨论的配置通过强烈的化学核心能级移动与分离的Te杂质区分开来。虽然发现Te团簇仅在非常小的浓度下形成，但可以清楚地识别出空位周围的二聚体型或多达四个Te离子的多Te构型。对于这些配置，发现Te的替代位点位置在所有情况下与数据最匹配。对于孤立的Te离子，这符合预期。对于多Te配置，该结果有助于理解硅中硫族超掺杂中自由电荷载流子的异常激活。
Multiple dopant configurations of Te impurities in close vicinity in silicon are investigated using photoelectron spectroscopy, photoelectron diffraction, and Bloch wave calculations. The samples are prepared by ion implantation followed by pulsed laser annealing. The dopant concentration is variable and high above the solubility limit of Te in silicon. The configurations in question are distinguished from isolated Te impurities by a strong chemical core level shift. While Te clusters are found to form only in very small concentrations, multi-Te configurations of type dimer or up to four Te ions surrounding a vacancy are clearly identified. For these configurations a substitutional site location of Te is found to match the data best in all cases. For isolated Te ions this matches the expectations. For multi-Te configurations the results contribute to understanding the exceptional activation of free charge carriers in hyperdoping of chalcogens in silicon.
论文链接：http://arxiv.org/pdf/2303.13368v1
更多计算机论文：http://cspaper.cn/